Prof. Nicolet received his Ph.D. from the University of Basel in 1958. He served on the editorial boards of Solid State Electronics, Journal of Applied Physics, and Applied Physics Letters and has been issued several patents. He has held visiting appointments at the Kernforschungszentrum in Karlsruhe, Germany; the University of Lyon, France; and the Centre National d'Etudes des Telecommunications (CNET), Grenoble, France. He has authored many technical papers, a number of review chapters, and is co-author of the monograph, Backscattering Spectrometry (Academic Press, New York, l978). Presently his group has active research projects (the reactions of thin film with semiconductors), and ways to suppress these by thin film diffusion barriers of interstitial alloys or amorphous metallic alloys (solid phase epitaxy; ion implantation and strain in epitaxial films); and the analysis of thin film materials by backscattering spectrometry and x-ray rocking curves.
Bai, G.; Nicolet, M. A.; Chern, C. H.; Wang, K. L. Strain Relief of Metastable GeSi Layers on Si(100). Journal of Applied Physics. 1994;
Baud, L.; Jaussaud, C.; Madar, R.; Bernard, C.; Chen, J. S.; Nicolet, M. A. Interfacial Reactions of W Thin-film on Single-crystal (001)Beta-SiC. Materials Science and Engineering B Solid State Materials for Advanced Technology. 1995;
Carns, T. K.; Chun, S. K.; Tanner, M. O.; Wang, K. L.; Kamins, T. I.; Turner, J. E.; Lie, D. Y. C.; Nicolet, M. A.; Wilson, R. G. Hole Mobility Measurements in Heavily-doped Si1-XGex Strained Layers. IEEE Transactions on Electron Devices. 1994;
Chen, J. S.; Bachli, A.; Nicolet, M. A.; Baud, L.; Jaussaud, C.; Madar, R. Contact Resistivity of Re, Pt and Ta Films on N-type Beta-SiC - Preliminary-results. Materials Science and Engineering B Solid State Materials for Advanced Technology. 1995;
Chen, J. S.; Kolawa, E.; Nicolet, M. A.; Ruiz, R. P. Ohmic Contacts to N-GaAs With A Pt/Ge/Au Contacting Layer and A Ta-Si-N Barrier - Electrical and Metallurgical Characteristics. Journal of Applied Physics. 1994;
Chen, J. S.; Kolawa, E.; Nicolet, M. A.; Ruiz, R. P.; Baud, L.; Jaussaud, C.; Madar, R. Reaction of Ta Thin-film with Single-crystalline (001) Beta-SiC. Journal of Applied Physics. 1994;
Chen, J. S.; Kolawa, E.; Nicolet, M. A.; Ruiz, R. P.; Baud, L.; Jaussaud, C.; Madar, R. Solid-state Reaction of Pt Thin-film With Single-crystal (001) Beta-SiC. Journal of Materials Research. 1994;
Chen, J. S.; Kolawa, E.; Nicolet, M. A.; Baud, L.; Jaussaud, C.; Madar, R.; Bernard, C. Stability of Rhenium Thin-films an Single-crystal (001) Beta-SiC. Journal of Applied Physics. 1994;
Chen, J. S.; Kolawa, E.; Nicolet, M. A.; Pool, F. S. Thermal-reaction of Ta Thin-films with Polycrystalline Diamond. Thin Solid Films. 1993;
Kim, K. H.; Kim, D. H.; Nam, S. T.; Lee, J. J.; Kim, I. H.; Kim, S. C.; Lee, J. Y.; Nicolet, M. A.; Bai, G. Characterization of Si-28+ and Ar-40+ Ion-implanted Epitaxial ReSi2 Films on an N-Si(100) Substrate. Journal of Applied Physics. 1993;
Kim, K. H.; Kim, S. C.; Lee, J. Y.; Nam, S. T.; Lee, J. J.; Choi, C. K.; Nicolet, M. A.; Bai, G. Structural and Electrical-properties of Si-28+ and Ar-40+ Ion-implanted Epitaxial ReSi2 Films Grown on N-Si(100) Substrates. Thin Solid Films. 1993;
Kim, K. H.; Nam, S. T.; Lee, J. J.; Kim, S. C.; Lee, J. Y.; Choi, C. K.; Nicolet, M. A.; Bai, G. Effects of Si-28+ and Ar-40+ Ion-implantation and Thermal Annealing of the Structural and Electrical-properties of Epitaxial ReSi2/N-Si (100) Substrates. Journal of the Korean Physical Society. 1993;
Kolawa, E.; Sun, X.; Reid, J. S.; Chen, J. S.; Nicolet, M. A.; Ruiz, R. Amorphous W40Re40B20 Diffusion-barriers for [Si]/Al and [Si]/Cu Metallizations. Thin Solid Films. 1993;
Kubota H; Nagata M; Miyagawa R; Nicolet, M. A. Oxidation of Tin Thin-films in An Ion-beam-assisted Deposition Process. Applied Surface Science. 1994;
Kubota, H.; Chen, J. S.; Nagata M; Kolawa, E.; Nicolet, M. A. Ion-beam-assisted Deposition of Tin Thin-films. Japanese Journal of Applied Physics Part 1 Regular Papers Short Notes & Review Papers. 1993;
Lie, D. Y. C.; Song, J. H.; Nicolet, M. A.; Theodore Nd. Advantage of Rapid Thermal Annealing over Furnace Annealing for P-implanted Metastable Si/Ge0.12Si0.88. Applied Physics Letters. 1995;
Lie, D. Y. C.; Song, J. H.; Vantomme, A.; Eisen, F.; Nicolet, M. A.; Theodore, N. D.; Carns, T. K.; Wang, K. L. Dependence of Damage and Strain on the Temperature of Si Irradiation in Epitaxial Ge0.10Si0.90 Films on Si(100). Journal of Applied Physics. 1995;
Lie, D. Y. C.; Vantomme, A.; Eisen, F.; Vreeland, T.; Nicolet, M. A.; Carns, T. K.; Arbetengels, V.; Wang, K. L. Damage and Strain in Epitaxial GexSi1-X Films Irradiated With Si. Journal of Applied Physics. 1993;
Lie, D. Y. C.; Vantomme, A.; Eisen, F.; Vreeland, T.; Nicolet, M. A.; Carns, T. K.; Wang, K. L.; Hollander, B. Damage and Strain in Pseudomorphic Vs Relaxed GexSi1-X Layers on Si(100) Generated by Si Ion Irradiation. Journal of Electronic Materials. 1994;
Liu, W. S.; Chen, J. S.; Lie, D. Y. C.; Nicolet, M. A. Ge-epilayer of High-quality on a Si-substrate by Solid-phase Epitaxy. Applied Physics Letters. 1993;
Liu, W. S.; Chen, J. S.; Nicolet, M. A.; Arbetengels, V.; Wang, K. L. Nanocrystalline Ge in SiO2 by Annealing of GexSi1-XO2 in Hydrogen. Applied Physics Letters. 1993;
Liu, W. S.; Nicolet, M. A.; Carns, T. K.; Wang, K. L. Epitaxial Ge Layers on Si Via GexSi1-XO2 Reduction - the Roles of the Hydrogen Partial-pressure and the Ge Content. Journal of Electronic Materials. 1994;
Long, R. G.; Becker, J. P.; Mahan, J. E.; Vantomme, A.; Nicolet, M. A. Heteroepitaxial Relationships for CrSi2 Thin-films on Si(111). Journal of Applied Physics. 1995;
Mclane Gf; Casas L; Reid, J. S.; Nicolet, M. A. Reactive Ion Etching of Ta-si-n Diffusion-barriers in Chf3+O-2. Electronics Letters. 1995;
Mclane, G. F.; Casas, L.; Reid, J. S.; Kolawa, E.; Nicolet, M. A. Reactive Ion Etching of Ta-SiNn Diffusion-barriers in CF4+O2. Journal of Vacuum Science & Technology B. 1994;
Park, S. G.; Liu, W. s.; Nicolet, M. A. Kinetics and Mechanism of Wet Oxidation of GexSi1-X Alloys. Journal of Applied Physics. 1994;
Reid, J. S.; Kolawa, E.; Ruiz, R. P.; Nicolet, M. A. Evaluation of Amorphous (Mo, Ta, W)-Si-N Diffusion-barriers For [Si]/Cu Metallizations. Thin Solid Films. 1993;
Reid, J. S.; Sun, X.; Kolawa, E.; Nicolet, M. A. Ti-Si-N Diffusion-barriers Between Silicon and Copper. IEEE Electron Device Letters. 1994;
Sun, X.; Kolawa, E.; Chen, J. S.; Reid, J. S.; Nicolet, M. A. Properties of Reactively Sputter-deposited Ta-N Thin-films. Thin Solid Films. 1993;
Vantomme, A.; Nicolet, M. A.; Long, R. G.; Mahan, J. E. Epitaxial Ternary RexMo1-XSi2 Thin-films on Si(100). Journal of Applied Physics. 1994;
Vantomme, A.; Nicolet, M. A.; Theodore, N. D. Epitaxial CoSi2 Films on Si(100) by Solid-phase Reaction. Journal of Applied Physics. 1994;
Vantomme, A.; Nicolet, M. A.; Bai, G.; Fraser, D. B. Formation of Epitaxial CoSi2 on Si(100) - Role of the Annealing Ambient. Applied Physics Letters. 1993;
Vantomme, A.; Nicolet, M. A.; Bai, G.; Fraser, D. B. Growth of Epitaxial CoSi2, on Si(100) Using Si(100)/Ti/Co Bilayers. Applied Surface Science. 1993;
Vantomme, A.; Nicolet, M. A.; Long, R. G.; Mahan, J. E.; Pool, F. S. Reactive Deposition Epitaxy of CrSi2. Applied Surface Science. 1993;